| 摘要 |
<p>A CVD reactor (10) having a thermal source that regulates heat to a semiconductor substrate inside said reactor (10) so as to cause an even distribution of heat across the substrate during processing. In one embodiment the thermal source is in the form of a disk (12) which is parallel and concentric with a substrate wafer (13) being processed, said disk (12) being closely spaced from the wafer (13) to uniformly heat the wafer (13) to a temperature suitable for processing. The thermal source disk (12) is heated by a light source (115) which impinges light on one surface (116) of the disk (12) which is oriented away from the wafer (13) so that the other surface (118) of this disk (12) facing the wafer (13) has a uniformity of temperature thereby effecting uniformity of wafer processing. <IMAGE></p> |
