| 摘要 |
A process for the preparation of uniform and ultra-thin films of metal oxides, metal chalcogenides, or metal halides, which comprises of allowing to react interfacially, the two immiscible solutions prepared as mentioned hereinbelow. (a) Preparing an aqueous solution containing cation/anion or species of corresponding elements, leading to the formation of metal oxides, chalcogenides or halides of which the film is desired; (b) Preparing a solution of the appropriate cation or anion or species of the corresponding elements leading to formation metal oxides, chalcogenides, and halides; the film of which is to be prepared, in a volatile solvent which also facilitates the spreading of the solution on the aqueous solution prepared in step (a); (c) Spreading the solution prepared in step (b) on the aquesous solution prepared in step (a) so as to form a film at the interface of aqueous and solvent solutions, evaporating the solvent, compressing the film formed at the interface laterally; (d) Dipping a substrate in the solution and withdrawing it from the solution at a uniform rate to transfer the film on substrate surface; The preparation and the deposition operations being effected at a temperature in the range of 10 DEG -50 DEG C., and (e) Crystallizing the films formed on the substrate by heating it at high temperature.
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