发明名称 |
SILICON DIOXIDE BONDING LAYERS AND METHOD |
摘要 |
A liquid crystal light valve that has an indium tin oxide (ITO) primary electrode disposed between two silicon dioxide bonding layers. The first bonding layer for bonding the primary electrode to a glass substrate and the second bonding layer for bonding said primary electrode to a hydrogenated amorphous silicon layer. The ITO primary electrode is sputtered which significantly reduces processing time and the silicon dioxide bonding layers allow the primary electrode to be bonded to the glass substrate and the hydrogenated amorphous silicon layer without peeling. For some applications the silicon dioxide bonding layer between the glass substrate and the primary electrode is not necessary. |
申请公布号 |
EP0728324(A1) |
申请公布日期 |
1996.08.28 |
申请号 |
EP19950901053 |
申请日期 |
1994.10.26 |
申请人 |
HUGHES-JVC TECHNOLOGY CORPORATION |
发明人 |
STERLING, RODNEY, D.;LEE, YU-TAI |
分类号 |
G02F1/13;G02F1/135;(IPC1-7):G02F1/13 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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