| 摘要 |
<p>The invention relates to methods for programming memories of the fuse protected type, particularly those used in smart cards, and involves applying the burn-out voltage for a duration (204) much higher than normal and limiting the current (206) to a value which is also much higher than normal, typically 100 ms and 2A. Programmable computer means (102) are used to adjust these values and carry out preliminary tests. Reconstitution of the blown fuse and associated errors are prevented.</p> |
