发明名称 LAMINATED SEMICONDUCTOR CERAMIC CAPACITOR WITH A GRAIN BOUNDARY-INSULATED STRUCTURE AND A METHOD FOR PRODUCING THE SAME
摘要 A laminated semiconductor ceramic capacitor with a grain boundary-insulated structure comprises a semiconductor ceramic block with a grain boundaryinsulated structure, a plurality of Ni inner electrodes and outer electrodes, wherein the Ni inner electrodes are obtained from a paste containing a powder prepared by solubilizing at least one compound containing an atom selected from the group consisting of Li, Na and K into Ni or an Ni containing compound; the Ni inner electrodes are placed in a substantially parallel manner within the ceramic block to reach to the corresponding opposite edges of the ceramic block alternatively one by one; and the outer electrodes are electrically connected to the corresponding edges of the inner electrodes, respectively.
申请公布号 CA2058410(C) 申请公布日期 1996.08.27
申请号 CA19912058410 申请日期 1991.12.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 UENO, IWAO;WAKAHATA, YASUO;KOBAYASHI, KIMIO;SHIRAISHI, KAORI;TAKAMI, AKIHIRO;OGOSHI, YOUICHI
分类号 H01G4/12;(IPC1-7):H01G4/12 主分类号 H01G4/12
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