发明名称 |
Semiconductor layer structure having distributed strain and optical semiconductor device including such strained layer |
摘要 |
A semiconductor layer structure comprises a first semiconductor layer, and a second semiconductor layer adjacent the first layer at a boundary. The first semiconductor layer has a uniform lattice constant in its layering direction. The second semiconductor layer has a distributed lattice constant varying in its layering direction. Each region of the second semiconductor layer is strained due to biaxial strain introduced by a difference in lattice constant between each region and the first semiconductor layer. The strain in the second semiconductor layer has a distribution such that no crystal defects occur in the second semiconductor layer when the second layer is thicker than a critical thickness defined by the maximum strain in the second layer. The strained semiconductor layer structure may be used as a light confinement layer in a semiconductor optical device.
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申请公布号 |
US5550393(A) |
申请公布日期 |
1996.08.27 |
申请号 |
US19940316451 |
申请日期 |
1994.10.03 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
NISHIMURA, MICHIYO |
分类号 |
G02F1/35;B82Y20/00;G02F1/355;H01L29/205;H01S5/00;H01S5/32;H01S5/34;H01S5/343;(IPC1-7):H01L31/032;H01L31/033;H01L31/072;H01L31/109 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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