| 摘要 |
A power supply circuit selectively provides various voltage signals to memory devices, such as EPROM or EEPROM for example. The power supply circuit receives voltage signals at input terminals and selectively outputs a voltage signal, in accordance with the requirement for reading, writing and erasing operations, while preventing leakage current between voltage signals. Among other things, the power supply circuit provides a relatively low impedance and does not require high voltage levels for performing the above memory operations. The selection of voltage signals at an output terminal is effected by control means for controlling conductivity and non-conductivity of MOS transistors based on a control signal supplied from a control signal input terminal.
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