| 摘要 |
A process is disclosed for curing a hydrogen silsesquioxane coating material to form SiO2 by first placing the coating material in a preheated furnace; igniting a plasma ignited in the furnace immediately after insertion of the coating material therein; then raising the temperature of the furnace up to a predetermined curing temperature, while still maintaining the plasma in the chamber; maintaining the coating material at the curing temperature until substantially all of the coating material has cured to form SiO2; and then extinguishing the plasma and cooling the furnace. In another embodiment, the coating material is cured, with or without the assistance of heat and a plasma, in an ultrahigh vacuum, i.e., a vacuum of at least 10-5 Torr or better, and preferably at least 10-6 Torr or better.
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