| 摘要 |
FIELD: small-scale instruments for gas detection and analysis. SUBSTANCE: device has silicon substrate which has diaphragm on which film heater, film terminals of heater, insulating dielectric layer and gas-sensitive layer with film electrodes and film terminals are located in symmetry about center of diaphragm. Film heater has two identical resistive elements which are located along two opposite edges of diaphragm. Both insulating layer and diaphragm have cuts which run along other opposite edges of diaphragm for all their length. Gas- sensitive layer electrodes are located over central part of diaphragm in area which is free from film resistive elements. EFFECT: decreased power consumption, increased selectivity. 1 dwg |
