发明名称 Semiconductor device and process of producing same
摘要 A semiconductor device includes a semiconductor substrate having a memory cell area and a circuit area surrounding the memory cell area with a boundary area interposed therebetween. A first conductive layer covers the memory cell area and extends onto the boundary area. A first insulating layer covers the surrounding circuit area and part of the extended portion of the first conductive layer. A second insulating layer covers the first insulating layer and the first conductive layer. A throughhole is formed through the first and second insulating layers. A second conductive layer is electrically connected with another conductive layer via the throughhole and extends from the memory cell area to the surrounding circuit area. The process of producing the semiconductor device is also disclosed.
申请公布号 US5550395(A) 申请公布日期 1996.08.27
申请号 US19950376082 申请日期 1995.01.20
申请人 FUJITSU LIMITED 发明人 EMA, TAIJI;IKEDA, TOSHIMI
分类号 H01L21/8244;H01L27/10;H01L27/105;H01L27/108;H01L27/11;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 主分类号 H01L21/8244
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