发明名称 |
Semiconductor device and process of producing same |
摘要 |
A semiconductor device includes a semiconductor substrate having a memory cell area and a circuit area surrounding the memory cell area with a boundary area interposed therebetween. A first conductive layer covers the memory cell area and extends onto the boundary area. A first insulating layer covers the surrounding circuit area and part of the extended portion of the first conductive layer. A second insulating layer covers the first insulating layer and the first conductive layer. A throughhole is formed through the first and second insulating layers. A second conductive layer is electrically connected with another conductive layer via the throughhole and extends from the memory cell area to the surrounding circuit area. The process of producing the semiconductor device is also disclosed.
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申请公布号 |
US5550395(A) |
申请公布日期 |
1996.08.27 |
申请号 |
US19950376082 |
申请日期 |
1995.01.20 |
申请人 |
FUJITSU LIMITED |
发明人 |
EMA, TAIJI;IKEDA, TOSHIMI |
分类号 |
H01L21/8244;H01L27/10;H01L27/105;H01L27/108;H01L27/11;(IPC1-7):H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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