发明名称 Temperature compensated silicon carbide pressure transducer and method for making the same
摘要 A pressure transducer comprising a deflecting member fabricated from a semiconducting material having a first conductivity and a negative temperature coefficient of resistance, and four piezoresistive sensors fabricated from a semiconducting material having a second conductivity opposite to the first conductivity and a positive temperature coefficient of resistance, the sensors being disposed on a first surface of the deflecting member whereby the sensors are to be coupled to form a Wheatstone bridge configuration, and a temperature compensating resistor network fabricated from the semiconducting material of the first conductivity whereby when the resistor network is coupled to the sensors coupled in the Wheatstone bridge configuration, and a voltage placed across the bridge and the temperature compensating resistor network, an output is provided by the bridge which is independent of changes in temperature.
申请公布号 US5549006(A) 申请公布日期 1996.08.27
申请号 US19940248428 申请日期 1994.05.24
申请人 KULITE SEMICONDUCTOR PRODUCTS, INC. 发明人 KURTZ, ANTHONY D.
分类号 G01L9/00;G01L19/04;(IPC1-7):G01L19/04;G01B7/16 主分类号 G01L9/00
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