METHOD FOR DEPOSITING FILMS OF HYDROGENATED SILICON

摘要

FIELD: film application techniques. SUBSTANCE: invention relates to fabrication of thin-film solar elements, photoresponsive materials for optic sensors, and thin-film transistors for great-size displays. Method consists in that working gas from a source enters a vacuum chamber to create supersonic stream of silicon-containing gas, which is passed through electron-beam plasma to create neutral silicon radical admixtures in the gas stream needed for depositing film onto base surface located in the low-pressure gas stream. EFFECT: increased film growth velocity with no loss in quality.