| 摘要 |
forming a gate electrode(9) of a TFT and a down electrode(9a) of a photo diode simultaneously on a substrate; forming an insulating films(10,10a) used as a barrier of the gate electrode(9) and the lower electrode(9a); forming a-Si:H layers(11,11a) and n+a-Si:H layers(12,12a) on the gate electrode(9) and the lower electrode(9a) and removing the n+a-Si:H layer(12) of the TFT channel region; forming a transparent electrode(13) on the n+a-Si:H layer(12a) of the photo diode; and forming source/ drain electrodes(14,14a) of which one side is connected to the transparent electrode(13).
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