| 发明名称 |
MANUFACTURING METHOD OF PROTECTION SHIELD OF THIN FILM TRANSISTOR |
| 摘要 |
forming a source/drain region(7'a,7'b) with a metal capable of anodic oxidation and forming an anti oxidation pattern to cover a panout part(11) of the source/drain electrode; forming a protection shield(9) by partial anodic oxidation of the surface of the source/drain electrode.
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| 申请公布号 |
KR960011473(B1) |
申请公布日期 |
1996.08.22 |
| 申请号 |
KR19930014058 |
申请日期 |
1993.07.23 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, HO - MIN |
| 分类号 |
H01L27/13;(IPC1-7):H01L27/13 |
主分类号 |
H01L27/13 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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