| 摘要 |
a n-ohmic electrode(11) formed on one side of a n-GaAs substrate(1); a n-GaAlAs layer(2), a p-GaAs layer(3), a p-GaAlAs layer(4), a p-GaAs layer(5) and a p-ohmic electrode(6) deposited on the other side of the n-GaAs substrate in sequence; a Ni metal layer(9) as a heat sink formed on the p-ohmic electrode(6); a metal layer for soldering(10) formed on the Ni metal layer(9).
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