| 摘要 |
<p>A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S)2 comprises depositing a first layer (16) of (In,Ga)x(Se,S)y followed by depositing just enough Cu+(Se,S) or Cux(Se,S) to produce the desired slightly Cu-poor material layer (18). In variation, most, but not all, (about 90 % to 99 %) of the (In,Ga)x(Se,S)y layer (20) is deposited first, followed by deposition of all the Cu+(Se,S) or Cux(Se,S) layer (22) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 % to 10 %) of the (In,Ga)x(Se,S)y layer (24) to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 % to 10 %) of the (In,Ga)x(Se,S)y is first deposited as a seed layer (26), followed by deposition of all of the Cu+(Se,S) or Cux(Se,S) to make a very Cu-rich mixture layer (28), and then followed deposition of the remainder of the (In,Ga)x(Se,S)y layer (30) to go slightly Cu-poor in the final Cu(In,Ga)(Se,S)2 thin film.</p> |
