| 摘要 |
<p>A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10 %, preferably less than 2 %. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %. Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.</p> |
