FORMING METHOD OF GATE ELECTRODE

摘要

The method of forming gate electrode comprises the steps of : forming a gate oxide film(2) by thermal oxidation of a silicone substrate(1) and forming a polysilicone film(3) and then depositing a silicide film(4) after injecting impurity to the polysilicone film; depositing a protecting film(10) with low reflectance; and forming a polycide oxide film(5) by oxidating the protecting film(10) after removing some part of the protecting film(10), the silicide film(4) and the doped polysilicone film(3).