发明名称 SEMICONDUCTOR LASER AND THE MANUFACTURING METHOD THEREOF
摘要 The method has the feature that a laser diode(3) is fabricated by depositing a metal electrode(5) using a thermal evaporator at a 10 micrometer Torr and evaporating a solder(4) in the thickness of 1.5 micrometer and the fabricated laser diode is joined by being arranged on the submount(2). The method reduces manufacturing time by removing the process of aligning the solder on the submount.
申请公布号 KR960011481(B1) 申请公布日期 1996.08.22
申请号 KR19900022463 申请日期 1990.12.29
申请人 LG ELECTRONICS CO., LTD. 发明人 NOH, MIN - SOO
分类号 (IPC1-7):H01S3/19 主分类号 (IPC1-7):H01S3/19
代理机构 代理人
主权项
地址