Back-source power MOSFET for power integrated circuit or discrete module

摘要

The MOSFET includes an n-type semiconductor substrate (101), and a p-type base layer (102) formed on a surface of the substrate. An n-type source zone (104) is formed in the base layer and is connected with the substrate while an n-type drain-drift zone (105) is formed in the base layer. An n-type drain zone (106) is formed in the drain-drift zone, and a gate electrode (107) is formed on a gate insulating film (108) on a section of the base layer between the source zone and the drain-drift zone. Also provided are respective drain (111) and source electrodes.