| 摘要 |
A semiconductor on insulator composite substrate apparatus, such as silicon-on-sapphire and a method for fabricating the same. More particularly, a resistor, transistor, memory cell or other circuit element utilizing an ultrathin silicon layer on a sapphire substrate and a method for fabricating the same. An aspect of the invention provides a resistive load in the thin silicon layer which is self-aligned to a transistor or other circuit element, for example, enabling elimination of a polysilicon layer or enabling a compact memory cell, analog circuit or other integrated circuit. Another aspect of the invention is to eliminate or reduce parasitic effects. A third aspect of the invention is to improve process characteristics, and a fourth aspect of the invention is to improve production yields. |
