SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

摘要

forming a number of pillars(34) having an insulating film spacer(36) in their side wall and arranged in a certain direction by etching the semiconductor substrate(30); filling with some material the area between the pillars(34); forming a pillar(42) with some material by etching the above material after forming a mask pattern; etching the insulating film spacer(36) after removing the mask pattern; forming a word line(44) in the side of the pillar(42) by reactive ion etching after forming a conductive layer on the upper side of the substrate.