| 摘要 |
A process for filling submicron, high aspect ratio gaps, that may have reentrant angles, with a high quality ILD. A first ILD layer is deposited using PECVD to partially fill the gap. Medium-pressure sputter etching is then used to remove the bread-loaf edges and redeposit the etched material in the gaps, thereby allowing small gaps with high aspect ratios and reentrant angles to be completely filled. Finally, a second ILD layer that completely fills the gap is deposited using PECVD.
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