Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations,申请号EP19890201223-传众专利搜索

发明名称	Method of manufacturing a semiconductor device comprising a silicon body in which semiconductor regions are formed by ion implantations
摘要
申请公布号	EP0358246(B1)	申请公布日期	1996.08.21
申请号	EP19890201223	申请日期	1989.05.16
申请人	PHILIPS ELECTRONICS N.V.	发明人	STOLMEIJER, ANDRE;VAN ATTEKUM , PAULUS MARIA THEODORUS MATTHEUS;DEN BLANKEN, HUBERTUS JOHANNES;VAN DER PLAS, PAULUS ANTONIUS;DE WERDT, REINIER
分类号	H01L21/265;H01L21/8238;H01L27/092;(IPC1-7):H01L21/265;H01L21/82	主分类号	H01L21/265
代理机构		代理人
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