SEMICONDUCTOR MEMORY DEVICE FABRICATION PROCESS

摘要

(a) forming a field oxide film(12) to confine an active area and an inactive area on the semiconductor substrate(10); (b) forming a transistor on the active area; (c) forming a first insulating film(19) to insulate the transistor; (d) forming a pure RSO(Rugged Surface Oxide) film(44) on the first insulating film by using a mixed gas of SiH4 and N4O; (e) forming a contact hole(9) by etching the first insulating film and the RSO film(44) to reveal a part of the source region(14) of the transistor; (f) forming a first conductive layer(50) over the whole surface of the substrate; (g) forming a storage electrode(100) by patterning the first conductive layer.