| 摘要 |
<p>An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber (14) having a side wall (10) and a ceiling (12), a wafer pedestal (36) for supporting the wafer in the chamber, an RF power source (28, 30), apparatus (24) for introducing a processing gas into the reactor chamber, and a coil inductor (18) adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling. <IMAGE></p> |
