SEMICONDUCTOR MEMORY DEVICE FABRICATION PROCESS

摘要

forming a word line(3) and a word line insulating film on the semiconductor substrate; forming a conducting layer on the word line insulating film and the substrate; forming a HSG layer(7) on the conducting layer; forming an insulating film(9) over the whole surface; forming a number of micro cylinders on the top of the conducting layer by etching back of the insulating film(9) and the HSG layer(7) in order not to expose the top of the word line insulating film.