Semiconductor device with low concentration n region to improve dV/dt capability
摘要
申请公布号
EP0505191(B1)
申请公布日期
1996.08.21
申请号
EP19920302392
申请日期
1992.03.19
申请人
HARRIS CORPORATION
发明人
JONES, FREDERICK PETER;YEDINAK, JOSEPH ANDREW;NEILSON, JOHN MANNING SAVIDGE;WRATHALL, ROBERT STEPHEN;MANSMANN, JEFFREY GERARD;JACKOSKI, CLAIRE ELIZABETH