发明名称 |
MASK PATTERN OVERLAPING DEGREE MEASUREMENT METHOD |
摘要 |
manufacturing a misalignment mark with a finite width between two patterns; manufacturing a align mark having a minimum repeat pattern; manufacturing a new align mark with the misalignment mark and the align mark; perceiving the overlay and defect of the mask pattern throughout a decision of protection region of the repeat pattern.
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申请公布号 |
KR960011253(B1) |
申请公布日期 |
1996.08.21 |
申请号 |
KR19920027370 |
申请日期 |
1992.12.31 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
BAE, SANG - MAN;HAM, YOUNG - MOK |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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