发明名称 MASK PATTERN OVERLAPING DEGREE MEASUREMENT METHOD
摘要 manufacturing a misalignment mark with a finite width between two patterns; manufacturing a align mark having a minimum repeat pattern; manufacturing a new align mark with the misalignment mark and the align mark; perceiving the overlay and defect of the mask pattern throughout a decision of protection region of the repeat pattern.
申请公布号 KR960011253(B1) 申请公布日期 1996.08.21
申请号 KR19920027370 申请日期 1992.12.31
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 BAE, SANG - MAN;HAM, YOUNG - MOK
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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