发明名称 |
SIC THIN FILM THERMISTER |
摘要 |
A thin-film thermistor element which comprises an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films. A method of making the thermistor element is also disclosed. <IMAGE> |
申请公布号 |
KR960011154(B1) |
申请公布日期 |
1996.08.21 |
申请号 |
KR19910012766 |
申请日期 |
1991.07.25 |
申请人 |
MATSUSHITA ELECTRIC IND. K.K. |
发明人 |
NAGAI, TAKESHI;ITO, SHUJI;JURUDA, KUNIHIRO |
分类号 |
H01C1/14;(IPC1-7):H01C7/04 |
主分类号 |
H01C1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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