发明名称 SIC THIN FILM THERMISTER
摘要 A thin-film thermistor element which comprises an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films. A method of making the thermistor element is also disclosed. <IMAGE>
申请公布号 KR960011154(B1) 申请公布日期 1996.08.21
申请号 KR19910012766 申请日期 1991.07.25
申请人 MATSUSHITA ELECTRIC IND. K.K. 发明人 NAGAI, TAKESHI;ITO, SHUJI;JURUDA, KUNIHIRO
分类号 H01C1/14;(IPC1-7):H01C7/04 主分类号 H01C1/14
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