摘要 |
<p>A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part comprising an n-type cladding layer composed of an InGaAlP compound semiconductor material, an active layer and a p-type cladding layer formed in that order from the substrate side by double heterojunction, wherein said semiconductor light emitting element satisfies at least one of the following conditions: A. the thickness of said active layer being greater than 0.75 mu m and not more than 1.5 mu m, and B. the thickness of said p-type cladding layer being 0.5 mu m - 2.0 mu m. According to the light emitting element of the present invention, an overflow of electron into the p-type cladding layer can be suppressed by setting the thickness of the active layer and the p-type cladding layer to fall within the above-mentioned specific ranges, as a result of which the element shows luminous efficiency peaked within the specified range. <IMAGE></p> |
申请人 |
MITSUBISHI CABLE INDUSTRIES, LTD. |
发明人 |
HIROAKI, OKAGAWA, C/O ITAMI FACTORY;TAKAYUKI, HASHIMOTO;KEIJI, MIYASHITA, C/O ITAMI FACTORY;TOMOO, YAMADA, C/O ITAMI FACTORY;KAZUYUKI, TADATOMO, C/O ITAMI FACTORY |