Transistor with inverse silicide T-gate structure,申请号EP19910311048-传众专利搜索

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发明名称	Transistor with inverse silicide T-gate structure
摘要
申请公布号	EP0490535(B1)	申请公布日期	1996.08.21
申请号	EP19910311048	申请日期	1991.11.28
申请人	AT&T CORP.	发明人	CHEN, MIN-LIANG
分类号	H01L29/78;H01L21/336;H01L21/8238;H01L27/092;H01L29/423;(IPC1-7):H01L29/772	主分类号	H01L29/78
代理机构		代理人
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