Method of improving the manufaturing of SOI devices by forming position alignment marks

摘要

The method for forming a position alignment mark (3a) in a SOI semiconductor component manufacturing process comprises the steps of simultaneously forming on a silicon substrate an alignment marking contact hole (8a) and a back surface electrode contact hole (8b) in a field zone and an element zone, respectively, forming on the field and element zones a conduct pattern and a back surface electrode, respectively, and cutting away a silicon layer from the back surface of the silicon substrate to expose a conduct pattern and an alignment marking contact hole pattern and then using the contact hole pattern as an alignment mark for forming a surface electrode (6).