| 发明名称 |
Nonvolatile control architecture |
| 摘要 |
A nonvolatile memory, includes multiple nonvolatile registers with each nonvolatile register including memory cells, and further includes circuitry that writes information to each of the nonvolatile registers one at a time, in a rotating order to prolong the prevention of tunneling oxide breakdown.
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| 申请公布号 |
US5548550(A) |
申请公布日期 |
1996.08.20 |
| 申请号 |
US19950386400 |
申请日期 |
1995.02.10 |
| 申请人 |
DALLAS SEMICONDUCTOR CORP. |
发明人 |
ZANDERS, GARY V.;SCHERPENBERG, FRANCIS A.;DEIERLING, KEVIN E. |
| 分类号 |
G05B24/02;H01L27/06;H03M1/66;H03M1/76;H04R25/00;(IPC1-7):G11C14/00 |
主分类号 |
G05B24/02 |
| 代理机构 |
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