发明名称 PATTERN PLOTTING DEVICE USED IN EUV SPECTRUM
摘要 <p>PROBLEM TO BE SOLVED: To improve the resolution of a spacial image by a method wherein a stop region masks a reflcting substrate from incident radiation by using a reflecting mask, the thickness of the stop region imparts phase shift of a specific angle to the radiation every one way pass, and the thickness and the refractive index of the stop region impart phase shift to the radiation in a specfic wavelength range. SOLUTION: A substrate retains DBR structure 12 as a repetition layer pair of high and low refractive indexes material. The layer pair introduces phase lag of half/wavelength or more and, as the result, the synthesized reflection has single phase. A stop region consists of a phase shift layer 13 and an attenuation layer 14. The thickness of the stop region imparts phase shift of about 90 deg. to the radiation evey one way pass. The thickness and the refractive index impart this phase shift to the radiation having a wavelength in the wavelength range from 150 nm to 3 nm. That is, a ray 16 enters the masked part of a DBR surface 19, attenuates while passing one way of the layer 14 and the layer 13, and generates the phase shift. Thus a ray 18 is obtained.</p>
申请公布号 JPH08213312(A) 申请公布日期 1996.08.20
申请号 JP19950271663 申请日期 1995.10.20
申请人 AT & T CORP 发明人 DONARUDO MIRAN TENANTO;DONARUDO ROORENSU HOWAITO;OBAATO RIIBUSU UTSUDO SEKANDO
分类号 G21K5/02;G03F1/24;G03F1/26;G03F1/32;H01L21/027;(IPC1-7):H01L21/027 主分类号 G21K5/02
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