| 摘要 |
PURPOSE: To provide a semiconductor device which can sufficiently utilize the merits of transistors formed at a silicon substrate region and an SOI region and respond to the increase in capacity. CONSTITUTION: In a DRAM 20 having a memory cell 22, a logic circuit 23, and an input and output circuit 21 as a circuit configuration and an SOI region 25 and a silicon substrate region 24 as a device structure, the cell 22 is formed in the region 25, and the circuit 23 and the circuit 21 are formed in the region 24. |
