发明名称 |
Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer |
摘要 |
For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed on a portion of the first oxide superconductor thin film. A second oxide superconductor thin film is grown on an exposed surface of the first oxide superconductor thin film, using the gate electrode as a mask, so that first and second superconducting regions having a relatively thick thickness are formed at opposite sides of the gate electrode, electrically isolated from the gate electrode. A source electrode and a drain electrode is formed on the first and second oxide superconducting regions. The superconducting device thus formed can functions as a super-FET.
|
申请公布号 |
US5547923(A) |
申请公布日期 |
1996.08.20 |
申请号 |
US19950476582 |
申请日期 |
1995.06.07 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAMURA, TAKAO;INADA, HIROSHI;IIYAMA, MICHITOMO |
分类号 |
H01L39/14;(IPC1-7):H01L39/24 |
主分类号 |
H01L39/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|