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发明名称
SILICON CARBIDE HORIZONTAL HIGH BREAKDOWN STRENGTH MOSFET
摘要
申请公布号
JPH08213606(A)
申请公布日期
1996.08.20
申请号
JP19950017612
申请日期
1995.02.06
申请人
FUJI ELECTRIC CO LTD
发明人
UENO KATSUNORI
分类号
H01L29/78;H01L29/12;H01L29/24;(IPC1-7):H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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