| 摘要 |
In a device for the protection of integrated circuits against electrostatic discharges, the protection structure comprises a thyristor with an N+ region connected to the ground, a P- substrate, a deep N- well forming a gate region, and a P+ region connected to an external connection pad to be protected. The gate region is connected by a low-value resistor (with a maximum value of a few ohms) to the pad. This resistor increases the current for which the thyristor gets triggered and eliminates certain risks of the destruction of the circuit. |
