| 摘要 |
PURPOSE: To provide a semiconductor device having low ON resistance and rapid switch off by a method wherein the cathode and anode of lateral insulating gate bipolar transistor are connected to source and drain of lateral dual diffused metal-oxide-semiconductor. CONSTITUTION: An n-epitaxial layer 22 on a p-substrate 21 is divided into two regions 22a, 22b by a trench well 23 while an insulating layer 24 is formed on surfaces 25, 26 so that the left side of the trench well 23 may be made a lateral insulating gate bipolar transistor(LIGBT) and the right side may be made a lateral dual diffused metal-oxide-semiconductor(LDMOS). Besides, a P well 29 is formed by the side of a right side n<+> drain 28 while n<+> , p<+> regions 30, 31 are formed on the surface to form a source of the LDMOS. Likewise, left side anode 34 is formed on the surface of the n-layer 22a while p well 35, n<+> region 36, p<+> region 37 are formed by the side on the surface of the n<-> layer to form cathode of LIGBT thereby enabling a high breakdown voltage, low ON resistance rapid power switching device to be obtained. |
