SHF DIODE WITH SCHOTTKY BARRIER AND PROCESS OF ITS MANUFACTURE

摘要

FIELD: radio engineering. SUBSTANCE: proposed SHF diode with Schottky barrier is intended for millimeter and submillimeter range of waves. It has girder and volumetric leads and insulation of anode lead from backing by air passage formed in nand nlayers of i-n-n semiconductor structure under marrow part of anode lead. Diode is characterized by complete or partial removal of dielectric from surface of n layer under anode lead along its periphery. Expanded part of anode lead of such diode is located not on dielectric layer as in prototype but on nlayer of semiconductor structure and is formed simultaneously and similarly to cathode contact and lead. Narrow part of anode lead presents either air bridge connecting expanded part of anode lead with anode contact or same bridge but leaning against dielectric under it, between it and n layer of semiconductor structure. Influence of key source of shunting capacitance is minimized in diode of such design due to formation of air passage between anode and cathode regions and parasitic MIS capacitance over periphery or rectifying contact is eliminated completely or partially. EFFECT: enhanced functional stability of SHF diode, facilitated manufacture.