| 摘要 |
PURPOSE: To enable the charge holding time to be prolonged while the erasing time to be notably shortened furthermore, the multivalue memory to be made operational. CONSTITUTION: In the semiconductor memory, plural semiconductor insular regions in thickness exceeding 0.1μm completely insulated from adjacent regions electrically are provided in respective one MISFET and the charge 12 for data memory made of the charge in the opposite conductivity type to that of the source/drain regions 7, 8 of the MISFET is accumulated in the region 11 electrically floating between the source/drain regions of the MISFET. |
