| 摘要 |
PURPOSE: To enhance a capacitor located in a semiconductor device in effective area by a method wherein a protrudent region which protrudes inwards is provided in a region of a semiconductor substrate where a first gate electrode is formed, and an interlayer insulating film is formed covering the protrudent region so as to form the first gate electrode into an arc-shaped or an obtuse edge in cross section. CONSTITUTION: A first gate electrode 5A is formed on a semiconductor substrate 1, an insulating film 6A which serve to store charge is formed on the first gate electrode 5A, and a second gate electrode 7A is formed on the insulating film 6A. The first gate electrode 5A and the second gate electrode 7A are both formed bestriding a level difference at a boundary between an N-type well region 3 and a P-type well region. As mentioned above, a protrudent region which protrudes inwards is formed in a region where the first gate electrode 5A is formed, an interlayer insulating film 8 is formed covering the protrudent region so as to form the first gate electrode 5A into an arc-shaped or obtuse edge in cross section. Therefore, a capacitor is enhanced in effective area. |
