| 摘要 |
PURPOSE: To enable wide growth of the 111}A crystal surface in an optical device in a semiconductor laser having a projected structure in the [011] crystal axis direction on the GaAs substrate having the main surface of 100} crystal surface and the 111}A crystal surface formed from the resonator end face of this semiconductor laser. CONSTITUTION: In the manufacture of an optical device including a semiconductor laser LD having a projected structure in the direction of [011] crystal axis on the GaAs substrate having the main surface of 100} crystal surface and the 111}A crystal surface which will become a reflecting mirror 7 formed of the resonator edge face of the semiconductor laser LD, the 111}A crystal surface is formed by setting the raw material supply ratio of group V and group III, namely, the V/III ratio x to 35<x<=200, preferably to 50<=x<=150. |
