发明名称 |
Extended drain resurf lateral DMOS devices |
摘要 |
A high voltage PMOS or NMOS transistor 7 has improved on-resistance by truncating gate field oxide 43 so that drain region 42 may be implanted closer to channel region 49 than possible otherwise. By shortening the physical distance d2 between drain 42 and channel region 49, the drain to source on-resistance of the high voltage device is reduced and the performance of high voltage device 7 is thereby improved.
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申请公布号 |
US5548147(A) |
申请公布日期 |
1996.08.20 |
申请号 |
US19950369973 |
申请日期 |
1995.01.05 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MEI, CHIA-CU P. |
分类号 |
H01L21/336;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L29/76;H01L21/265 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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