| 摘要 |
<p>PURPOSE: To assure the capacitance requiring auxiliary capacitors without sacrificing the opening rates of pixels. CONSTITUTION: At least pixel electrodes 4, thin-film transistors(TFTs) and the auxiliary capacitors Cs are integrated and formed on a driving substrate 1. At least counter electrodes 5 are formed on a counter substrate 2. Liquid crystals 3 are held between both substrates 1 and 2 joined via a prescribed spacing. The TFTs are composed of semiconductor thin films 8 having plane regions, gate insulating films 9 formed atop the plane regions and gate electrodes 10 patterned and formed on these gate insulating films 9. On the other hand, the auxiliary capacitors Cs are formed of the three-dimensionally configured regions disposed in a part of the semiconductor thin films 8 as first electrodes 15. Dielectric films 16 are formed on the front surfaces U, side faces W and rear surfaces L of these three-dimensionally configured regions. The auxiliary capacitors Cs are composed by forming second electrodes 17 in a manner as to envelope the three-dimensionally configured regions (first electrodes 15) via the dielectric films 16.</p> |
