| 摘要 |
Disclosed herein is a semiconductor device having a substrate, an insulating layer covering the substrate, a plurality of wiring layer formed on the insulating layer, each wiring layer having a top surface and a side surface, and a sidewall insulating film formed on and along the side surface of each of the wiring layers. The sidewall insulating film suppresses a hillock projecting from the side surface of each wiring layer.
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