| 摘要 |
PURPOSE: To reduce contact resistance by forming a multilayered film wherein GaPN thin films different in composition are alternately laminated between an AlGeInN based layer and an electrode. CONSTITUTION: The growth of mixed crystal of GaPN intermediate composition is difficult because of existence miscibility gap. By laminating superlattice composed of Gap rich thin films and GaN rich thin films, band structure equivalent to GaPN bulk can be realized. In order to reduce contact resistance in wide band gap semiconductor, a multilayered film formed by laminating GaPx N1-x (x>=0.9) thin films and GaPy N1-y (y<=0.1) thin films whose band gaps are small or equal to zero are inserted. Thereby although the carrier concentration can not be made very high, a potential barrier formed between an electrode and a surface layer is remarkably reduced, and ohmic contact is very easily obtained. |
