发明名称 |
Photodetecting circuit using avalanche photodiode |
摘要 |
A photodetecting circuit using an avalanche photodiode of the present invention has an avalanche photodiode, and a bias control means for applying a bias voltage to the avalanche photodiode to drive the avalanche photodiode at a high multiplication factor. The bias control means has a diode having the same temperature dependence of a breakdown voltage as that of the avalanche photodiode, and a control circuit for applying positive and negative potentials with respect to the ground potential between the anode and the cathode of the diode such that the diode is set in a breakdown state at a predetermined current. A positive or negative potential is applied from one of the anode and the cathode of the avalanche photodiode as a bias voltage, and a photocurrent is output from the other terminal of the avalanche photodiode.
|
申请公布号 |
US5548112(A) |
申请公布日期 |
1996.08.20 |
申请号 |
US19940359722 |
申请日期 |
1994.12.20 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
NAKASE, SHIGEKI;NAKAMURA, SHIGEYUKI;OHTA, TSUYOSHI |
分类号 |
G01D5/30;H01L31/10;H01L31/107;H03F3/08;H03K17/78;H04B10/04;H04B10/06;H04B10/14;H04B10/158;H04B10/26;H04B10/28;(IPC1-7):H01J40/14 |
主分类号 |
G01D5/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|