发明名称 Photodetecting circuit using avalanche photodiode
摘要 A photodetecting circuit using an avalanche photodiode of the present invention has an avalanche photodiode, and a bias control means for applying a bias voltage to the avalanche photodiode to drive the avalanche photodiode at a high multiplication factor. The bias control means has a diode having the same temperature dependence of a breakdown voltage as that of the avalanche photodiode, and a control circuit for applying positive and negative potentials with respect to the ground potential between the anode and the cathode of the diode such that the diode is set in a breakdown state at a predetermined current. A positive or negative potential is applied from one of the anode and the cathode of the avalanche photodiode as a bias voltage, and a photocurrent is output from the other terminal of the avalanche photodiode.
申请公布号 US5548112(A) 申请公布日期 1996.08.20
申请号 US19940359722 申请日期 1994.12.20
申请人 HAMAMATSU PHOTONICS K.K. 发明人 NAKASE, SHIGEKI;NAKAMURA, SHIGEYUKI;OHTA, TSUYOSHI
分类号 G01D5/30;H01L31/10;H01L31/107;H03F3/08;H03K17/78;H04B10/04;H04B10/06;H04B10/14;H04B10/158;H04B10/26;H04B10/28;(IPC1-7):H01J40/14 主分类号 G01D5/30
代理机构 代理人
主权项
地址