发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 The device for improving an ESD(Electro Static Discharge) characteristic by preventing a high additional discharge from causing a defect on IC components, includes a circuit protection device inserted at proper field regions between pads and IC components, a pad input protection device discharging most high voltages biased at the ESD inspection, an inner field transistor(TR1) formed by the pad input protection device and the circuit protection device discharging the rest of the voltages, to prevent the high voltage from passing an inner field transistor(TR2).
申请公布号 KR960011175(B1) 申请公布日期 1996.08.21
申请号 KR19920012787 申请日期 1992.07.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, BOK - MOON;HWANG, HONG - SUN
分类号 H01L27/04;H01L27/10;(IPC1-7):H01L27/10 主分类号 H01L27/04
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